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1N5820

Silicon Rectifier Diodes

Description

1N5820, 1N5821, 1N5822 Silicon Rectifier Diodes Schottky Barrier, Fast Switching Features: D 3.0 Ampere Operation at TA = +95C Application: D For Use in Low Voltage, High Frequency Inverters Free Wheeling, and Polarity Protection Applications Maximum Ratings and Electrical Characteristics: (TA = +25C unless otherwise specified) Maximum Repetitive 1N5820...

NTE

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