BUK7518-55

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in automotive and general purpose switching applications. BUK7518-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 57 125 175 18 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 55 55 16 57 40 228 125 175 UNIT V V V A A A W ˚C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDITIONS Human body model (100 pF, 1.5 kΩ) MIN. MAX. 2 UNIT kV THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting bas...