BUK7506-55A

BUK7506-55A; BUK7606-55A TrenchMOS™ standard level FET Rev. 02 — 03 July 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 (D2-PAK). 2. Features s TrenchMOS™ technology s Q101 compliant s 175 °C rated s Standard level compatible. 3. Applications s Automotive and general purpose power switching: c c x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pinning - SOT78, SOT404, simplified outline and symbol Pin Description Simplified outline 1 gate (g) 2 drain (d) mb 3 source (s) mb mounting base; connected to drain (d) mb MBK106 123 SOT78 (TO-220AB) 2 1 3 MBK116 SOT404 (D2-PAK) Symbol d g MBB076 s Philips Semiconductors BUK7506-55A; BUK7606-55A TrenchMOS™ standard level FET 5. Quick reference data Table 2: Quick reference data Symbol Parameter VDS ID Ptot Tj RDSon drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance 6. Limiting values Conditions Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A Tj = 25 °C Tj = 175 °C Typ − [1] − − − 5.3 − Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source vo...