Document
Philips Semiconductors
Product specification
PowerMOS transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications.
BUK566-60H
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 60 60 150 175 22 UNIT V A W ˚C mΩ
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 15 60 44 240 150 175 175 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.0 UNIT K/W K/W
August 1995
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor Logic level FET
STATIC CHARACTERISTICS
Tmb= 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; VDS = 60 V; VGS = 0 V; Tj = 125 ˚C VGS = ±15 V; VDS = 0 V VGS = 5 V; ID = 25 A MIN. 60 1.0 -
BUK566-60H
TYP. 1.5 1 0.1 10 18
MAX. 2.0 10 1.0 100 22
UNIT V V µA mA nA mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 5 V; RGS = 50 Ω; Rgen = 50 Ω Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad MIN. 17 TYP. 30 2200 700 280 40 150 350 190 2.5 7.5 MAX. 2800 1000 400 50 250 450 250 UNIT S pF pF pF ns ns ns ns nH nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 50 A; VGS = 0 V IF = 50 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V MIN. TYP. 1.1 80 0.4 MAX. 60 240 2.0 UNIT A A V ns µC
AVALANCHE LIMITING VALUE
SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 50 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C MIN. TYP. MAX. 150 UNIT mJ
August 1995
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor Logic level FET
BUK566-60H
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
10
Zth j-mb / (K/W)
BUKx56-lv
1
D= 0.5
0.1
0.2 0.1 0.05 0.02 P D 0 tp tp T t 1E+01
0.01
D=
0
20
40
60
80 100 Tmb / C
120
140
160
180
0.001 1E-05 1E-03 t/s
T 1E-01
Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID / IDmax % Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
ID / A 10 8 BUK5y6-60A 7 6 VGS / V = 100 5 4.5 4
120 100 80 60 40 20 0
150
50 3.5 3 2.5 0 0 2 4 6 VDS / V 8 10 12
0
20
40
60
80 100 Tmb / C
120
140
160
180
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
BUK556-60H
Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS
RDS(ON) / Ohm
3 3.5 4 4.5 5
1000
ID / A
0.1
BUK5y6-60A
100
RD
S(
ON
)=
VD
S/
ID
0.08
tp = 10 us 100 us 1 ms
6
0.06
0.04
7
10
DC 10 ms 100 ms
0.02
VGS / V = 10
1 1 10 VDS / V 100
0 0 20 40 60 80 ID / A 100 120 140
Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS
August 1995
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor Logic level FET
BUK566-60H
150
ID / A
BUK5y6-60A
VGS(TO) / V max.
2
Tj / C = 25
100
150
typ.
1
min.
50
0 0 2 4 VGS / V 6 8 10
0 -60 -20 20 60 Tj / C 100 140 180
Fig.7. Typical transfer characteristics. ID = f(VGS) ; co.