DatasheetsPDF.com

BUK566-60H Dataheets PDF



Part Number BUK566-60H
Manufacturers NXP
Logo NXP
Description PowerMOS transistor Logic level FET
Datasheet BUK566-60H DatasheetBUK566-60H Datasheet (PDF)

Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. BUK566-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-s.

  BUK566-60H   BUK566-60H


Document
Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. BUK566-60H QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 60 60 150 175 22 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 15 60 44 240 150 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.0 UNIT K/W K/W August 1995 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET STATIC CHARACTERISTICS Tmb= 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; VDS = 60 V; VGS = 0 V; Tj = 125 ˚C VGS = ±15 V; VDS = 0 V VGS = 5 V; ID = 25 A MIN. 60 1.0 - BUK566-60H TYP. 1.5 1 0.1 10 18 MAX. 2.0 10 1.0 100 22 UNIT V V µA mA nA mΩ DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 25 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 5 V; RGS = 50 Ω; Rgen = 50 Ω Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad MIN. 17 TYP. 30 2200 700 280 40 150 350 190 2.5 7.5 MAX. 2800 1000 400 50 250 450 250 UNIT S pF pF pF ns ns ns ns nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 50 A; VGS = 0 V IF = 50 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V MIN. TYP. 1.1 80 0.4 MAX. 60 240 2.0 UNIT A A V ns µC AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 50 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C MIN. TYP. MAX. 150 UNIT mJ August 1995 2 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET BUK566-60H 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 Zth j-mb / (K/W) BUKx56-lv 1 D= 0.5 0.1 0.2 0.1 0.05 0.02 P D 0 tp tp T t 1E+01 0.01 D= 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 1E-05 1E-03 t/s T 1E-01 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID / IDmax % Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A 10 8 BUK5y6-60A 7 6 VGS / V = 100 5 4.5 4 120 100 80 60 40 20 0 150 50 3.5 3 2.5 0 0 2 4 6 VDS / V 8 10 12 0 20 40 60 80 100 Tmb / C 120 140 160 180 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V BUK556-60H Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON) / Ohm 3 3.5 4 4.5 5 1000 ID / A 0.1 BUK5y6-60A 100 RD S( ON )= VD S/ ID 0.08 tp = 10 us 100 us 1 ms 6 0.06 0.04 7 10 DC 10 ms 100 ms 0.02 VGS / V = 10 1 1 10 VDS / V 100 0 0 20 40 60 80 ID / A 100 120 140 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS August 1995 3 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor Logic level FET BUK566-60H 150 ID / A BUK5y6-60A VGS(TO) / V max. 2 Tj / C = 25 100 150 typ. 1 min. 50 0 0 2 4 VGS / V 6 8 10 0 -60 -20 20 60 Tj / C 100 140 180 Fig.7. Typical transfer characteristics. ID = f(VGS) ; co.


BUK566-60A BUK566-60H BUK573-48C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)