EDBA164B2PR

216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features LPDDR2 SDRAM EDB8164B4PR, EDB8164B4PK, EDB8164B4PT, EDBA164B2PR Features Ultra-low-voltage core and I/O power supplies Frequency range – 533 MHz (data rate: 1066 Mb/s/pin) 4n prefetch DDR architecture 8 internal banks for concurrent operation Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) Programmable READ and WRITE latencies (RL/WL) Burst length: 4, 8, and 16 Per-bank refresh for concurrent operation Auto temperature-compensated self refresh (ATCSR) by built-in temperature sensor Partial-array self refresh (PASR) Deep power-down mode (DPD) Selectable output drive strength (DS) Clock-stop capability Lead-free (RoHS-compliant) and halogen-free packaging Table 1: Key Timing Parameters Speed Grade 1D Clock Rate Data Rate (MHz) (Mb/s/pin) 533 1066 RL...