Document
Philips Semiconductors
Product Specification
PowerMOS transistor Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK552-60A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 14 60 175 0.15 MAX. -60B 60 13 60 175 0.18 UNIT V A W ˚C Ω
PINNING - TO220AB
PIN 1 2 3 tab gate drain source drain DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ tp ≤ 50 µs Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -60A 14 10 56 60 175 175 MAX. 60 60 15 20 -60B 13 9 52 UNIT V V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W
April 1993
1
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor Logic level FET
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 ˚C VDS = 60 V; VGS = 0 V; Tj =125 ˚C VGS = ±15 V; VDS = 0 V VGS = 5 V; BUK552-60A BUK552-60B ID = 8.5 A MIN. 60 1.0 -
BUK552-60A/B
TYP. 1.5 1 0.1 10 0.12 0.15
MAX. 2.0 10 1.0 100 0.15 0.18
UNIT V V µA mA nA Ω Ω
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 8.5 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 5 V; RGS = 50 Ω; Rgen = 50 Ω Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 5 TYP. 6.7 400 150 65 12 60 50 45 3.5 4.5 7.5 MAX. 600 200 100 18 80 70 70 UNIT S pF pF pF ns ns ns ns nH nH nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 14 A ; VGS = 0 V IF = 14 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 1.3 60 0.18 MAX. 14 56 1.7 UNIT A A V ns µC
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 14 A ; VDD ≤ 25 V ; VGS = 5 V ; RGS = 50 Ω MIN. TYP. MAX. 30 UNIT mJ
April 1993
2
Rev 1.100
Philips Semiconductors
Product Specification
PowerMOS transistor Logic level FET
BUK552-60A/B
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
1E+01
Zth j-mb / (K/W)
BUKX52
1E+00
0.5
0.2 0.1 0.05 1E-01 0.02 0
0 20 40 60 80 100 Tmb / C 120 140 160 180
P D
tp
D=
tp T t
1E-02 1E-07
T
1E-05
1E-03 t/s
1E-01
1E+01
Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID% Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
ID / A 10 7 BUK552-60A 6
120 110 100 90 80 70 60 50 40 30 20 10 0
28 24 20 16 12 8 4
0 20 40 60 80 100 Tmb / C 120 140 160 180
5
VGS / V =
4
3
0 0 2 4 VDS / V 6 8 10
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
BUK552-60
A
VD S/ ID
Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS
RDS(ON) / Ohm 3 3.5 4 4.5 5 BUK552-60A VGS / V = 5.5 6 7
100
ID / A
0.5
B
0.4
tp = 10 us
RD
S( O
N)
=
0.3
100 us
10
0.2
DC 1 ms 10 ms 100 ms 1
10
0.1
1
0
10
VDS / V
100
0
10
20 ID / A
30
40
Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS
April 1993
3
Rev 1.100
Philips Semiconduc.