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BUK552-60B Dataheets PDF



Part Number BUK552-60B
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK552-60B DatasheetBUK552-60B Datasheet (PDF)

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK552-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (D.

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Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications. BUK552-60A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK552 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. -60A 60 14 60 175 0.15 MAX. -60B 60 13 60 175 0.18 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ±VGSM ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Non-repetitive gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ tp ≤ 50 µs Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 -60A 14 10 56 60 175 175 MAX. 60 60 15 20 -60B 13 9 52 UNIT V V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 2.5 UNIT K/W K/W April 1993 1 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 ˚C VDS = 60 V; VGS = 0 V; Tj =125 ˚C VGS = ±15 V; VDS = 0 V VGS = 5 V; BUK552-60A BUK552-60B ID = 8.5 A MIN. 60 1.0 - BUK552-60A/B TYP. 1.5 1 0.1 10 0.12 0.15 MAX. 2.0 10 1.0 100 0.15 0.18 UNIT V V µA mA nA Ω Ω DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 8.5 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 5 V; RGS = 50 Ω; Rgen = 50 Ω Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 5 TYP. 6.7 400 150 65 12 60 50 45 3.5 4.5 7.5 MAX. 600 200 100 18 80 70 70 UNIT S pF pF pF ns ns ns ns nH nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 14 A ; VGS = 0 V IF = 14 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 1.3 60 0.18 MAX. 14 56 1.7 UNIT A A V ns µC AVALANCHE LIMITING VALUE Tmb = 25 ˚C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 14 A ; VDD ≤ 25 V ; VGS = 5 V ; RGS = 50 Ω MIN. TYP. MAX. 30 UNIT mJ April 1993 2 Rev 1.100 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK552-60A/B 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1E+01 Zth j-mb / (K/W) BUKX52 1E+00 0.5 0.2 0.1 0.05 1E-01 0.02 0 0 20 40 60 80 100 Tmb / C 120 140 160 180 P D tp D= tp T t 1E-02 1E-07 T 1E-05 1E-03 t/s 1E-01 1E+01 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A 10 7 BUK552-60A 6 120 110 100 90 80 70 60 50 40 30 20 10 0 28 24 20 16 12 8 4 0 20 40 60 80 100 Tmb / C 120 140 160 180 5 VGS / V = 4 3 0 0 2 4 VDS / V 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V BUK552-60 A VD S/ ID Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON) / Ohm 3 3.5 4 4.5 5 BUK552-60A VGS / V = 5.5 6 7 100 ID / A 0.5 B 0.4 tp = 10 us RD S( O N) = 0.3 100 us 10 0.2 DC 1 ms 10 ms 100 ms 1 10 0.1 1 0 10 VDS / V 100 0 10 20 ID / A 30 40 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS April 1993 3 Rev 1.100 Philips Semiconduc.


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