BUK446-800A

Philips Semiconductors Product Specification PowerMOS transistor BUK446-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK446 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -800A 800 2.0 30 3 MAX. -800B 800 1.7 30 4 UNIT V A W Ω PINNING - SOT186 PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 -800A 2.0 1.3 8 30 150 150 MAX. 800 800 30 -800B 1.7 1.1 6.8 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 4.16 UNIT K/W K/W May 1995 1 Rev 1.200 Philips Semiconductors Product Specification PowerMOS t...