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BUK212-50Y

NXP

Power MOSFET

BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Rev. 01 — 17 March 2003 Product data 1. Product profile 1.1 Desc...


NXP

BUK212-50Y

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Description
BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ Rev. 01 — 17 March 2003 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected single high-side power switch based on TOPFET™ Trench technology in a 5-pin surface mount or leadform plastic package. Product availability: BUK212-50Y in SOT263B-01 BUK217-50Y in SOT426 (D2-PAK). 1.2 Features s s s s s s s Very low quiescent current Power TrenchMOS™ Overtemperature protection Over and undervoltage protection Reverse battery protection Low charge pump noise Loss of ground protection s s s s s s s CMOS logic capability Negative load clamping Overload protection ESD protection for all pins Diagnostic status indication Operating voltage down to 5.5 V Current limitation. 1.3 Applications s 12 V and 24 V grounded loads s Inductive loads s High inrush current loads s Replacement for relays and fuses. 1.4 Quick reference data Table 1: Symbol RBLon IL IL(nom) IL(lim) VBG(oper) Quick reference data Parameter battery-load on-state resistance load current nominal load current (ISO) self-limiting load current battery-ground operating voltage Min 25 47 5.5 Max 14 44 100 35 Unit mΩ A A A V Philips Semiconductors BUK212-50Y; BUK217-50Y Single channel high-side TOPFET™ 2. Pinning information mb mb B S 1 2 3 4 5 I P L 1 MBL431 5 03pa56 MBL264 G Fig 1. Pinning; SOT426 (D2-PAK). Fig 2. Pinning; SOT263B-01. Fig 3. Symbol; (HSS) TOPFETTM. 2.1 Pin description Table 2: Symbol G I B S L [1] [2...




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