Philips Semiconductors
Product specification
PowerMOS transistor TOPFET
DESCRIPTION
Monolithic temperature and overloa...
Philips Semiconductors
Product specification
PowerMOS
transistor TOPFET
DESCRIPTION
Monolithic temperature and overload protected power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications.
BUK110-50GS
QUICK REFERENCE DATA
SYMBOL VDS ID PD Tj RDS(ON) PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance VIS = 10 V MAX. 50 50 125 150 28 UNIT V A W ˚C mΩ
APPLICATIONS
General controller for driving lamps motors solenoids heaters
FEATURES
Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 10 V input level Low threshold voltage also allows 5 V control Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
DRAIN
O/V CLAMP INPUT
RIG
POWER MOSFET
LOGIC AND PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT404
PIN 1 2 3 mb input drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
D TOPFET I
P
2 1 3
S
June 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS
transistor TOPFET
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMB...