Document
April 2015
MMN600DB015B
150V 600A N-ch Power MOSFET Module
Version 0
RoHS Compliant
PRODUCT FEATURES
□ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature
□ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside
APPLICATIONS
□ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter
Type MMN600DB015B
VDS 150V
ID 600A
RDS(ON).max TJ=25°C 2.1mΩ
TJmax 175℃
Marking MMN600DB015B
Package NDB
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VDSS VGSS
Drain Source Voltage Gate Source Voltage
TJ=25℃
ID Continuous Drain Current
TC=25℃ TC=100℃
IDM Pulsed Drain Current at VGS=10V PD Maximum Power Dissipation
Limited by TJmax
T C =25°C unless otherwise specified
Values
Unit
150 V
±20
850
600 A
1700
1500
W
THERMAL AND MODULE CHARACTERISTICS
Symbol
Parameter/Test Conditions
RthJC TJmax TSTG
Thermal resistance,junction to case Per MOSFET Max. Junction Tempera.