BZD142-130

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BZD142 ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode FEATURES Zener and blocking function in one package Glass passivated Low leakage current Excellent stability Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through ImplotecTM(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. BZD142 MGU216 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES SYMBOL Tstg Tj Zener Ptot total power dissipation Ttp = 25 °C; lead length 10 mm; see Fig.5 − 2.1 W PARAMETER storage temperature junction temperature CONDITIONS MIN. −65 −65 MAX. +150 +150 UNIT °C °C Blocking diode VR ERSM continuous reverse voltage non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj(max) prior to surge; inductive load switched off − − 600 10 V mJ 2000 Dec 19 2 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode ELECTRICAL CHARACTERISTICS ZENER/TVS Tj = 25 °C unless otherwise specified. WORKING VOLTAGE TYPE NUMBER SUFFIX(1) TEMPERATURE COEFFICIENT SZ (%/K) at Itest MIN. 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 MAX. 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 0.12 10 10 10 5 5 5 5 5 5 5 TE...