Document
SGH13N60UFD
N-CHANNEL IGBT
FEATURES
TO-3P
* High Speed Switching * Low Saturation Voltage
: VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD
: Trr = 37nS (typ.)
APPLICATIONS
* AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast
ABSOLUTE MAXIMUM RATINGS
C G
E
Symbol Characteristics
Rating Units
VCES
Collector-Emitter Voltage
600
VGES
Gate-Emitter Voltage
±20
IC Collector Current @ Tc = 25°C
13
Collector Current @ Tc = 100°C
6.5
ICM (1)
Pulsed Collector Current
52
IF
Diode Continuous Forward Current @ Tc = 100°C
8
IFM Diode Maximum Forward Current
56
PD Maximum Power Dissipation @Tc = 25°C
60
Maximum Power Dissipation @Tc = 100°C
25
Tj Operating Junction Temperature
-55 ~ 150
Tstg
Storage Temperature Range
-55 ~ 150
TL Maximum Lead Temp. For Soldering
300
Purposes, 1/8” from case for 5 seconds
Notes:(1) Repetitive rating : Pulse width limited by max. junction .