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BZB984-C11 Dataheets PDF



Part Number BZB984-C11
Manufacturers NXP
Logo NXP
Description Voltage regulator double diodes
Datasheet BZB984-C11 DatasheetBZB984-C11 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D793 BZB984 series Voltage regulator double diodes Product specification Supersedes data of 2001 Nov 28 2002 Jun 21 Philips Semiconductors Product specification Voltage regulator double diodes FEATURES • Total power dissipation: max. 425 mW • Approx. 5% VZ tolerance • Ultra small flat plastic SMD package • Working voltage range nom. 2.4 to 15 V (E24 range). APPLICATIONS • General regulation functions • ESD and surge protection. handbook, halfpage BZB984 .

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DISCRETE SEMICONDUCTORS DATA SHEET M3D793 BZB984 series Voltage regulator double diodes Product specification Supersedes data of 2001 Nov 28 2002 Jun 21 Philips Semiconductors Product specification Voltage regulator double diodes FEATURES • Total power dissipation: max. 425 mW • Approx. 5% VZ tolerance • Ultra small flat plastic SMD package • Working voltage range nom. 2.4 to 15 V (E24 range). APPLICATIONS • General regulation functions • ESD and surge protection. handbook, halfpage BZB984 series PINNING PIN 1 2 3 DESCRIPTION cathode 1 cathode 2 common anode 3 1 3 2 DESCRIPTION Low-power voltage regulator diodes in a SOT663 ultra small plastic SMD package. Fig.1 1 Top view 2 MHC314 Simplified outline (SOT663) and symbol. MARKING TYPE NUMBER BZB984-C2V4 BZB984-C2V7 BZB984-C3V0 BZB984-C3V3 BZB984-C3V6 MARKING CODE 91 92 93 94 95 TYPE NUMBER BZB984-C3V9 BZB984-C4V3 BZB984-C4V7 BZB984-C5V1 BZB984-C5V6 MARKING CODE 96 97 98 99 9A TYPE NUMBER BZB984-C6V2 BZB984-C6V8 BZB984-C7V5 BZB984-C8V2 BZB984-C9V1 MARKING CODE 9B 9C 9D 9E 9F TYPE NUMBER BZB984-C10 BZB984-C11 BZB984-C12 BZB984-C13 BZB984-C15 MARKING CODE 9G 9H 9J 9K 9L LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse dissipation storage temperature junction temperature tp = 100 µs; square wave; Tamb = 25 °C; prior to surge Tamb = 25 °C; 2 diodes loaded; note 1 Tamb = 25 °C; 1 diode loaded; note 1 tp = 100 µs; square wave; Tamb = 25 °C; prior to surge CONDITIONS − MIN. MAX. 200 UNIT mA see Table 1 − − − −65 − 425 265 40 +150 150 mW mW W °C °C 2002 Jun 21 2 Philips Semiconductors Product specification Voltage regulator double diodes ELECTRICAL CHARACTERISTICS Total BZB984-C series Tamb = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZB984-C2V4 BZB984-C2V7 BZB984-C3V0 BZB984-C3V3 BZB984-C3V6 BZB984-C3V9 BZB984-C4V3 BZB984-C4V7 BZB984-C5V1 BZB984-C5V6 BZB984-C6V2 BZB984-C6V8 BZB984-C7V5 BZB984-C8V2 BZB984-C9V1 BZB984-C10 BZB984-C11 BZB984-C12 BZB984-C13 BZB984-C15 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 10.5 V CONDITIONS IF = 10 mA; see Fig.2 BZB984 series MAX. 0.9 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 V UNIT µA µA µA µA µA µA µA µA µA µA µA µA µA nA nA nA nA nA nA nA 2002 Jun 21 3 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 1 Per type BZB984-C2V4 to C15 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZ = 5 mA BZB984Cxxx Tol. ≈5% MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 4 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 DIFFERENTIAL RESISTANCE rdif (Ω) at IZ = 1 mA TYP. 275 300 325 350 375 400 410 425 400 80 40 30 30 40 40 50 50 50 50 50 MAX. 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 at IZ = 5 mA TYP. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 −1.3 −1.4 −1.6 −1.8 −1.9 −1.9 −1.7 −1.2 −0.5 1.0 2.2 3.0 3.6 4.3 5.2 6.0 6.9 7.9 8.8 10.7 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 3 and 4) TYP. 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 90 85 80 75 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 2002 Jun 21 Philips Semiconductors Voltage regulator double diodes BZB984 series Product specification Philips Semiconductors Product specification Voltage regulator double diodes THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS 2 diodes loaded; note 1 1 diode loaded; note 1 2 diodes loaded; note 2 1 diode loaded; note 2 Notes 1. Solder points on cathode tabs. 2. Device mounted on an FR4 printed-circuit board. Soldering The only recommended soldering method is reflow soldering. GRAPHICAL DATA BZB984 series VALUE 125 230 294 472 UNIT K/W K/W K/W K/W handbook, halfpage 300 MLD362 MLD363 handbook, halfpage 0.5 IF (mA) 200 .


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