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BZA100

NXP

18-fold ESD transient voltage suppressor

DISCRETE SEMICONDUCTORS DATA SHEET M3D184 BZA100 18-fold ESD transient voltage suppressor Product specification Supers...


NXP

BZA100

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DISCRETE SEMICONDUCTORS DATA SHEET M3D184 BZA100 18-fold ESD transient voltage suppressor Product specification Supersedes data of 1996 Mar 21 1997 Dec 02 Philips Semiconductors Product specification 18-fold ESD transient voltage suppressor FEATURES SO20 SMD package allows 18 separate voltage regulator diodes in a common anode configuration Working voltage: typ. 6.8 V Forward voltage: max. 1.3 V Maximum reverse peak power dissipation: 27.5 W at tp = 1 ms Maximum clamping voltage at peak pulse current: 11 V at 2.5 A Low leakage current: max. 2 µA ESD rating >8 kV, according IEC 801-2. APPLICATIONS Where transient overvoltage protection in voltage and ESD sensitive equipment is required such as: – Computers – Printers – Business machines – Communication systems – Medical equipment. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IZ IF IFSM IZSM Ptot PARAMETER working current continuous forward current non-repetitive peak forward current non-repetitive peak reverse current total power dissipation tp = 1 ms; square pulse tp = 1 ms; square pulse; see Fig.2 see Fig.3 up to Ts = 60 °C; note 2 up to Tamb = 25 °C; note 3 PZSM Tstg Tj Notes 1. DC working current limited by Ptot max. 2. One or more diodes loaded; Ts is the temperature at the soldering point. 3. One or more diodes loaded; device mounted on a printed-circuit board with Rth a-s = 43.5 K/W. 1997 Dec 02 2 non-repetitive peak reverse power dissipation storage tempera...




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