BYX132G

DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability. APPLICATIONS Car ignition systems Automotive applications with extreme temperature requirements. k halfpage handbook, a MBK909 BYX132G DESCRIPTION Rugged glass package, using a high temperature alloyed construction. The SOD61AB2 is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. The BYX132G is marked with a red cathode band on the body. Fig.1 Simplified outline (SOD61AB2) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VRWM IF(AV) IRSM Tstg Tj Tj PARAMETER repetitive peak reverse voltage crest working reverse voltage average forward current non-repetitive peak reverse current storage temperature junction temperature junction temperature continuous max. 30 min. t = 100 µs triangular pulse; Tj max prior to surge CONDITIONS − − − − −65 − − MIN. 2 2 50 50 +200 175 200 MAX. UNIT kV kV mA mA °C °C °C CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltag...