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BYW81PI-200

STMicroelectronics

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

® BYW81P-200 BYW81PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSS...


STMicroelectronics

BYW81PI-200

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® BYW81P-200 BYW81PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 VRMS Capacitance = 7 pF A K K A DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-220AC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current δ = 0.5 BYW81P BYW81PI Tc=115°C Tc=90°C tp=10ms sinusoidal TO-220AC (Plastic) BYW81P-200 isolated TO-220AC (Plastic) BYW81PI-200 Parameter Value 35 15 15 200 - 40 to + 150 - 40 to + 150 Unit A A Surge non repetitive forward current Storage and junction temperature range A °C °C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 - Ed: 2D 1/6 BYW81P-200 / BYW81PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter BYW81P BYW81PI Value 2.0 3.5 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF ** Tj = 125°C Tj = 125°C Tj = 25°C IF = 12 A IF = 25 A IF = 25 A Test Conditions VR = VRRM Min. Typ. Max. 20 1.5 0.85 1.05 1.15 Unit µA mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduc...




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