BYW56

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYW54 to BYW56 Controlled avalanche rectifiers Product specification Supersedes data of 1996 Jun 11 1996 Oct 03 Philips Semiconductors Product specification Controlled avalanche rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION BYW54 to BYW56 Rugged glass package, using a high temperature alloyed construction. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYW54 BYW55 BYW56 VRWM crest working reverse voltage BYW54 BYW55 BYW56 VR continuous reverse voltage BYW54 BYW55 BYW56 IF(AV) average forward current PARAMETER repetitive peak reverse voltage  This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. − − − − − − − − − MAX. 600 800 1000 600 800 1000 600 800 1000 2.0 V V V V V V V V V A UNIT Ttp = 45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 80 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − − 0.8 A IFSM ERSM Tstg Tj non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature t = 10 ms half sinewave L = 120 mH; ...