Rectifier diodes ultrafast
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
GENERAL DESCRIPTION
Glass passivated high effi...
Description
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency rectifier diodes in full pack, plastic envelopes, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.
BYW29F series
QUICK REFERENCE DATA
SYMBOL VRRM VF IF(AV) trr PARAMETER BYW29FRepetitive peak reverse voltage Forward voltage Forward current Reverse recovery time MAX. 100 100 0.895 8 25 MAX. 150 150 0.895 8 25 MAX. 200 200 0.895 8 25 UNIT V V A ns
PINNING - SOD100
PIN 1 2 DESCRIPTION cathode anode
PIN CONFIGURATION
case
SYMBOL
a
k
case isolated
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Average forward current2 square wave; δ = 0.5; Ths ≤ 106 ˚C sinusoidal; a = 1.57; Ths ≤ 109 ˚C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 8 7.3 11.3 16 80 88 32 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C
IF(RMS) IFRM IFSM
I2t Tstg Tj
RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Ths ≤ 109 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Ope...
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