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BYV95B

EIC discrete Semiconductors

AVALANCHE FAST RECOVERY RECTIFIER DIODES

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 BYV95A - BYV96E PRV : 200 - 1000 Volts Io : 1.5 Amper...


EIC discrete Semiconductors

BYV95B

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 BYV95A - BYV96E PRV : 200 - 1000 Volts Io : 1.5 Amperes AVALANCHE FAST RECOVERY RECTIFIER DIODES DO-15 FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : DO-15 Molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.4 gram 0.142 (3.6) 0.102 (2.6) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 50 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Min. Avalanche Breakdown Voltage @ 100 μA Maximum Average Forward Rectified Current Lead Length 10 mm. ; Ttp = 65 °C Peak Forward Surge Current , 10 ms single half sine wave superimposed on rated load Maximum Forward Voltage at I F = 3.0 Amps. Maximum DC Reverse Current T J = 25 °C at Rated DC Blocking Voltage T J = 165 °C Maximum Reverse Recovery Time ( Note 1 ) Typical Thermal Resistance (Note 2) Junction Te...




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