BYV79E

DISCRETE SEMICONDUCTORS '$7$ 6+((7 BYV79E series Rectifier diodes ultrafast, rugged Product specification July 1998 1;3 Semiconductors Rectifier diodes ultrafast, rugged Product specification BYV79E series FEATURES Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance SYMBOL k 1 a 2 GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV79E series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN DESCRIPTION 1 cathode 2 anode tab cathode QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.9 V IF(AV) = 14 A IRRM ≤ 0.2 A trr ≤ 30 ns SOD59 (TO220AC) tab 12 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 145˚C BYV79E IF(AV) Average forward current1 square wave δ = 0.5; Tmb ≤ 120 ˚C IFRM Repetitive peak forward current t = 25 μs; δ = 0.5; Tmb ≤ 120 ˚C IFSM Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRWM(max) IRRM Repetitive peak reverse current tp = 2 μs; δ = 0.001 IRSM Non-repetitive peak reverse tp = 100 μs current Tstg Storage temperature Tj Operating junction temperature 1. Neglecting switching and reverse...