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BYV72F-100

NXP

Rectifier diodes ultrafast

Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated, high eff...


NXP

BYV72F-100

File Download Download BYV72F-100 Datasheet


Description
Philips Semiconductors Product specification Rectifier diodes ultrafast GENERAL DESCRIPTION Glass passivated, high efficiency, dual, rectifier diodes in a full pack, plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYV72F series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr PARAMETER BYV72FRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX. 100 100 0.90 20 28 MAX. 150 150 0.90 20 28 MAX. 200 200 0.90 20 28 UNIT V V A ns PINNING - SOT199 PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) PIN CONFIGURATION case SYMBOL a1 1 k2 1 2 3 a2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Output current (both diodes conducting)2 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave; δ = 0.5; Ths ≤ 78 ˚C sinusoidal; a = 1.57; Ths ≤ 78 ˚C t = 25 µs; δ = 0.5; Ths ≤ 78 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 ...




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