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BYV72EW

NXP

Rectifier diodes ultrafast/ rugged

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES • Low forward volt drop • Fas...


NXP

BYV72EW

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance BYV72EW series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 30 A IRRM = 0.2 A trr ≤ 28 ns a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV72EW series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode SOT429 (TO247) 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV72EW Tmb ≤ 144˚C -40 MIN. -150 150 150 150 30 30 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C IRRM IRSM Tstg Tj square wave δ = 0.5; Tmb ≤ 104 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 104 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage tempera...




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