Rectifier diodes ultrafast/ rugged
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
• Low forward volt drop • Fas...
Description
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Isolated mounting tab
BYV72EF series
SYMBOL
QUICK REFERENCE DATA VR = 150 V/ 200 V
a1 1 k 2
a2 3
VF ≤ 0.9 V IO(AV) = 20 A IRRM = 0.2 A trr ≤ 28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV72EF series is supplied in the conventional leaded SOT199 package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated
SOT199
case
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV72EF Ths ≤ 125˚C -40 MIN. -150 150 150 150 20 30 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C
IRRM IRSM Tstg Tj
square wave δ = 0.5; Ths ≤ 78 ˚C t = 25 µs; δ = 0.5; Ths ≤ 78 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperat...
Similar Datasheet