Document
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
FEATURES
• Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance
BYV44 series
SYMBOL
QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V
a1 1 k 2
a2 3
VF ≤ 1.12 V IO(AV) = 30 A trr ≤ 60 ns SOT78 (TO220AB)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV44 series is supplied in the conventional leaded SOT78 (TO220AB) package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature CONDITIONS BYV44 Tmb ≤ 136˚C square wave; δ = 0.5; Tmb ≤ 94 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 94 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 300 MAX. -400 400 400 400 30 30 150 160 150 150 -500 500 500 500 UNIT V V V A A A A ˚C ˚C
Tstg Tj
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 60 MAX. 2.4 1.4 UNIT K/W K/W K/W
1 Neglecting switching and reverse current losses. For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab. October 1998 1 Rev 1.400
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs MIN. -
BYV44 series
TYP. 0.95 1.08 1.15 10 0.3 40 50 4.2 2.5
MAX. 1.12 1.25 1.36 50 0.8 60 60 5.2 -
UNIT V V V µA mA nC ns A V
I
dI F dt
F
30 25
PF / W
Vo = 0.8900 V Rs = 0.0137 Ohms
BYV44
Tmb(max) / C 88 D = 1.0 90 0.5 102 114
tp T t
t
rr time
20 15 10 0.2 0.1
Q I R I
s
10%
100%
5
I
tp
D=
126 138
T
rrm
0
0
5
10 15 IF(AV) / A
20
150 25
Fig.1. Definition of trr, Qs and Irrm
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x √D.
BYV44
I
F
20
PF / W
Vo = 0.89 Rs = 0.0137
Tmb(max) / C 102 a = 1.57 1.9 2.2 114
15 4 10
2.8
time VF V VF time
126
5
138
fr
0 0 5 10 150 15
IF(AV) / A
Fig.2. Definition of Vfr
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
October 1998
2
Rev 1.400
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
BYV44 series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100 1A
100
2A
10 Tj = 25 C Tj = 100 C 1 1 10 dIF/dt (A/us) 100
10
1
1.0
10 -dIF/dt (A/us)
100
Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode
Fig.8. Maximum Qs at Tj = 25˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A 1 IF=1A
1
0.1
0.1
0.01
P D tp D= tp T t
Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100
0.001 1us 10us
T
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV42E
10s
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per diode
Fig.9. Transient thermal impedance per diode Zth j-mb= f(tp)
50
IF / A Tj = 25 C Tj = 150 C
BYV74
40
30 typ 20 max
10
0
0
0.5
1 VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj
October 1998
3
Rev 1.400
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYV44 series
4,5 max 10,3 max
1,3
3,7 2,8
5,9 min
15,8 max
3,0 max not tinned
3,0
13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54
0,9 max (3x)
0,6 2,4
Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.400
Philips Semiconductors
Product specification
Dual rectifier diodes ultrafast
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYV44 series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains prelim.