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BYV44-300 Dataheets PDF



Part Number BYV44-300
Manufacturers NXP
Logo NXP
Description Dual rectifier diodes ultrafast
Datasheet BYV44-300 DatasheetBYV44-300 Datasheet (PDF)

Philips Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BYV44 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k 2 a2 3 VF ≤ 1.12 V IO(AV) = 30 A trr ≤ 60 ns SOT78 (TO220AB) GENERAL DESCRIPTION Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency sw.

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Philips Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BYV44 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k 2 a2 3 VF ≤ 1.12 V IO(AV) = 30 A trr ≤ 60 ns SOT78 (TO220AB) GENERAL DESCRIPTION Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV44 series is supplied in the conventional leaded SOT78 (TO220AB) package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature CONDITIONS BYV44 Tmb ≤ 136˚C square wave; δ = 0.5; Tmb ≤ 94 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 94 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 300 MAX. -400 400 400 400 30 30 150 160 150 150 -500 500 500 500 UNIT V V V A A A A ˚C ˚C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 60 MAX. 2.4 1.4 UNIT K/W K/W K/W 1 Neglecting switching and reverse current losses. For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab. October 1998 1 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs MIN. - BYV44 series TYP. 0.95 1.08 1.15 10 0.3 40 50 4.2 2.5 MAX. 1.12 1.25 1.36 50 0.8 60 60 5.2 - UNIT V V V µA mA nC ns A V I dI F dt F 30 25 PF / W Vo = 0.8900 V Rs = 0.0137 Ohms BYV44 Tmb(max) / C 88 D = 1.0 90 0.5 102 114 tp T t t rr time 20 15 10 0.2 0.1 Q I R I s 10% 100% 5 I tp D= 126 138 T rrm 0 0 5 10 15 IF(AV) / A 20 150 25 Fig.1. Definition of trr, Qs and Irrm Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x √D. BYV44 I F 20 PF / W Vo = 0.89 Rs = 0.0137 Tmb(max) / C 102 a = 1.57 1.9 2.2 114 15 4 10 2.8 time VF V VF time 126 5 138 fr 0 0 5 10 150 15 IF(AV) / A Fig.2. Definition of Vfr Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). October 1998 2 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV44 series 1000 trr / ns 1000 Qs / nC IF=20 A IF = 20 A 100 1A 100 2A 10 Tj = 25 C Tj = 100 C 1 1 10 dIF/dt (A/us) 100 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode Fig.8. Maximum Qs at Tj = 25˚C; per diode 10 Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) IF= 20 A 1 IF=1A 1 0.1 0.1 0.01 P D tp D= tp T t Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100 0.001 1us 10us T 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV42E 10s Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per diode Fig.9. Transient thermal impedance per diode Zth j-mb= f(tp) 50 IF / A Tj = 25 C Tj = 150 C BYV74 40 30 typ 20 max 10 0 0 0.5 1 VF / V 1.5 2 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 3 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYV44 series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 4 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV44 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains prelim.


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