BYV42EB

DISCRETE SEMICONDUCTORS DATA SHEET BYV42E, BYV42EB series Rectifier diodes ultrafast, rugged Product specification July 1998 NXP Semiconductors Rectifier diodes ultrafast, rugged Product specification BYV42E, BYV42EB series FEATURES Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance Low thermal resistance SYMBOL a1 1 k2 a2 3 QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 30 A IRRM = 0.2 A trr ≤ 28 ns GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV42E series is supplied in the SOT78 conventional leaded package. The BYV42EB series is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION 1 anode 1 (a) tab tab 2 cathode (k) 1 3 anode 2 (a) 2 tab cathode (k) 1 23 13 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage BYV42E / BYV42EB Tmb ≤ 144˚C - -150 150 150 150 -200 200 200 200 V V V IO(AV) IFRM IFSM Average rectified output current square wave (both diodes conducting) Repetitive peak forward current δ t = = 205.5µ; sT;mδb ≤ = 108 0.5; ˚C per diode Non-repetitive peak forward Tmb ≤ 108 ˚C t = 10 ms curre...