Rectifier diodes ultrafast/ rugged
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
• Low forward volt drop • Fas...
Description
Philips Semiconductors
Product specification
Rectifier diodes ultrafast, rugged
FEATURES
Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability High thermal cycling performance low profile surface mounting package
BYV40E series
SYMBOL
QUICK REFERENCE DATA VR = 150 V/ 200 V
a1 1 k 2
a2 3
VF ≤ 0.7 V IO(AV) = 1.5 A IRRM = 0.1 A trr ≤ 25 ns
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV40E series is supplied in the SOT223 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode
SOT223
4
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV40E Tsp ≤ 120˚C MIN. -150 150 150 150 1.5 1.5 6 6.6 MAX. -200 200 200 200 UNIT V V V A A A A
IRRM IRSM Tstg Tj
square wave; δ = 0.5; Tsp ≤ 132˚C t = 25 µs; δ = 0.5; Tsp ≤ 132 ˚C tp = 10 ms tp = 8.3 ms sinusoidal; Tj = 150˚C prior to surge; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Stora...
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