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BYV29X Dataheets PDF



Part Number BYV29X
Manufacturers NXP
Logo NXP
Description Rectifier diodes ultrafast
Datasheet BYV29X DatasheetBYV29X Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BYV29F, BYV29X series Rectifier diodes ultrafast Product specification February 1999 NXP Semiconductors Rectifier diodes ultrafast Product specification BYV29F, BYV29X series FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab SYMBOL k 1 QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a VF ≤ 1.03 V 2 IF(AV) = 9 A trr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast epitaxial rec.

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DISCRETE SEMICONDUCTORS DATA SHEET BYV29F, BYV29X series Rectifier diodes ultrafast Product specification February 1999 NXP Semiconductors Rectifier diodes ultrafast Product specification BYV29F, BYV29X series FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab SYMBOL k 1 QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a VF ≤ 1.03 V 2 IF(AV) = 9 A trr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic lighting ballasts and high frequency switching circuits in general. The BYV29F series is supplied in the SOD100 package. The BYV29X series is supplied in the SOD113 package. PINNING SOD100 SOD113 PIN DESCRIPTION 1 cathode (k) case case 2 anode (a) tab isolated 12 12 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VRRM VR IF(AV) IFSM Tstg Tj Peak repetitive reverse voltage Continuous reverse voltage Average forward current2 Non-repetitive peak forward current Storage temperature Operating junction temperature BYV29F/BYV29X Ths ≤ 138˚C1 square wave; δ = 0.5; Ths ≤ 90 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) - - -40 - -300 300 300 MAX. -400 400 400 9 100 110 150 150 -500 500 500 UNIT V V A A A ˚C ˚C 1 Ths de-rating for thermal stability. 2 Neglecting switching and reverse current losses February 1999 1 Rev 1.400 NXP Semiconductors Rectifier diodes ultrafast Product specification BYV29F, BYV29X series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and all terminals to external dustfree heatsink Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree Cisol Capacitance from pin 2 to f = 1 MHz external heatsink MIN. TYP. MAX. UNIT - - 1500 V - - 2500 V - 10 - pF THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air. MIN. - TYP. 55 MAX. 5.5 7.2 - UNIT K/W K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRRM VdddIIIIFFFFIIIRFFF====///=ddd2111tttV00===AARAAR251ttMoo;000t;do0VVTAAIFVRRAj///µµ=dR≥≥/µsst≥1;33s=03T00010j VV0=˚V;;CA1; 0/µ0s˚C MIN. - TYP. 0.90 1.05 1.20 2.0 0.1 40 MAX. 1.03 1.25 1.40 50 0.35 60 UNIT V V V µA mA nC - 50 60 ns - 4.0 5.5 A - 2.5 - V February 1999 2 Rev 1.400 NXP Semiconduc.


BYV29F-500 BYV29X BYV29X-300


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