Document
DISCRETE SEMICONDUCTORS
DATA SHEET
BYV29F, BYV29X series Rectifier diodes ultrafast
Product specification
February 1999
NXP Semiconductors
Rectifier diodes ultrafast
Product specification
BYV29F, BYV29X series
FEATURES
• Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab
SYMBOL
k 1
QUICK REFERENCE DATA
VR = 300 V/ 400 V/ 500 V
a VF ≤ 1.03 V
2
IF(AV) = 9 A
trr ≤ 60 ns
GENERAL DESCRIPTION
Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic lighting ballasts and high frequency switching circuits in general.
The BYV29F series is supplied in the SOD100 package. The BYV29X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN DESCRIPTION 1 cathode (k)
case
case
2 anode (a)
tab isolated
12
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM VR IF(AV) IFSM
Tstg Tj
Peak repetitive reverse voltage Continuous reverse voltage Average forward current2
Non-repetitive peak forward current
Storage temperature Operating junction temperature
BYV29F/BYV29X
Ths ≤ 138˚C1
square wave; δ = 0.5; Ths ≤ 90 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max)
-
-
-40 -
-300 300 300
MAX.
-400 400 400
9
100 110
150 150
-500 500 500
UNIT
V V A
A A
˚C ˚C
1 Ths de-rating for thermal stability. 2 Neglecting switching and reverse current losses
February 1999
1
Rev 1.400
NXP Semiconductors
Rectifier diodes ultrafast
Product specification
BYV29F, BYV29X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER
CONDITIONS
Visol Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and
all terminals to external
dustfree
heatsink
Visol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H. ≤ 65%; clean
heatsink
and dustfree
Cisol Capacitance from pin 2 to f = 1 MHz external heatsink
MIN. TYP. MAX. UNIT - - 1500 V
- - 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs Rth j-a
Thermal resistance junction to heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound without heatsink compound in free air.
MIN.
-
TYP.
55
MAX.
5.5 7.2
-
UNIT
K/W K/W K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER VF Forward voltage
IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage
CONDITIONS IF = 8 A; Tj = 150˚C IF = 8 A IF = 20 A VR = VRRM VdddIIIIFFFFIIIRFFF====///=ddd2111tttV00===AARAAR251ttMoo;000t;do0VVTAAIFVRRAj///µµ=dR≥≥/µsst≥1;33s=03T00010j VV0=˚V;;CA1; 0/µ0s˚C
MIN.
-
TYP.
0.90 1.05 1.20 2.0 0.1 40
MAX.
1.03 1.25 1.40 50 0.35 60
UNIT
V V V µA mA nC
- 50 60 ns
- 4.0 5.5 A
- 2.5 -
V
February 1999
2
Rev 1.400
NXP Semiconduc.