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PF08127B

Renesas

MOS FET Power Amplifier Module

PF08127B MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone ADE-208-1606 (Z) Rev.0 Oct. ...


Renesas

PF08127B

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Description
PF08127B MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone ADE-208-1606 (Z) Rev.0 Oct. 2002 Application Triple band amplifier for E-GSM (880 MHz to 915 MHz), DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz). For 3.5 V & GPRS Class12 operation compatible Features All in one including output matching circuit Simple external circuit Simple power control High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max High efficiency : 55% Typ at 35.0 dBm for E-GSM 47% Typ at 32.5 dBm for DCS1800 47% Typ at 32.0 dBm for DCS1900 Pin Arrangement RF-Q-8 8 7G6 5 1 2G3 4 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8: Pin DCS G: GND PF08127B Absolute Maximum Ratings *1 (Tc = 25°C) Item Symbol Rating Unit Remark Supply voltage Vdd 7.0 V at no-operation 5.0 V at operation (50 Ω load) Supply current Vctl voltage Idd GSM Idd DCS Vctl ...




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