Ultra fast low-loss rectifier
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV160 Ultra fast low-loss rectifier
Product specificati...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYV160 Ultra fast low-loss rectifier
Product specification 2000 Feb 01
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
BYV160
3 page k (Datasheet)
Fig.1 Simplified outline (SOD57) and symbol.
a
MAM047
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 60 °C; lead length = 10 mm; see Fig.5; averaged over any 20 ms period; see Fig.6 t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax see Fig.7 CONDITIONS − − − MIN. MAX. 600 600 2 V V A UNIT
IFSM Tstg Tj
non-repetitive peak forward current storage temperature junction temperature
− −65 −65
40 +175 +175
A °C °C
ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR trr PARAMETER forward voltage reverse current reverse recovery time CONDITIONS IF = 2 A; Tj = Tj max; see Fig.2 IF = 2 A; see Fig.2 VR = VRRMmax; see Fig.3 VR = VRRMmax; Tj = 150 °C; see Fig.3 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A MAX. ...
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