BYV133F-45

Philips Semiconductors Product specification Rectifier diodes schottky barrier GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. BYV133F series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PARAMETER BYV133FRepetitive peak reverse voltage Forward voltage Average output current (both diodes conducting) MAX. 35 35 0.60 20 MAX. 40 40 0.60 20 MAX. 45 45 0.60 20 UNIT V V A PINNING - SOT186 PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) PIN CONFIGURATION case SYMBOL a1 1 k2 1 2 3 a2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 20 20 20 100 110 -45 45 45 45 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 112 ˚C Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Ths ≤ 61 ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Ths ≤ 61 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C pri...