Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast...
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Isolated package
BYV118F, BYV118X series
SYMBOL
QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V IO(AV) = 10 A VF ≤ 0.6 V
a1 1 k 2
a2 3
GENERAL DESCRIPTION
Dual, common cathode
schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV118F series is supplied in the SOT186 package. The BYV118X series is supplied in the SOT186A package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118FBYV118XVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Ths ≤ 97 ˚C square wave; δ = 0.5; Ths ≤ 107 ˚C square wave; δ = 0.5; Ths ≤ 107 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj m...