Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
• Low forward volt drop • Fast...
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance
BYV118, BYV118B series
SYMBOL
QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V
a1 1 k 2
a2 3
IO(AV) = 10 A VF ≤ 0.6 V
GENERAL DESCRIPTION
Dual, common cathode
schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV118 series is supplied in the SOT78 conventional leaded package. The BYV118B series is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118BYV118BVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (both diodes conducting) Repetitive peak forward current (per diode) Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 108 ˚C square wave; δ = 0.5; Tmb ≤ 127 ˚C square wave; δ = 0.5; Tmb ≤ 127 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; ...