DatasheetsPDF.com

BYT30PI Dataheets PDF



Part Number BYT30PI
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description FAST RECOVERY RECTIFIER DIODE
Datasheet BYT30PI DatasheetBYT30PI Datasheet (PDF)

® BYT 30PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF Insulating voltage 2500 VRSM A K SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS RECTIFIER IN S.M.P.S. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol VRRM VRSM IFRM IF (RMS) IF (AV) IFSM P Tstg Tj Parameter Repetitive Peak Reverse Voltage Non Repetitive Peak R.

  BYT30PI   BYT30PI


Document
® BYT 30PI-1000 FAST RECOVERY RECTIFIER DIODE VERY HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED: Capacitance 15pF Insulating voltage 2500 VRSM A K SUITABLE APPLICATIONS FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS RECTIFIER IN S.M.P.S. ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol VRRM VRSM IFRM IF (RMS) IF (AV) IFSM P Tstg Tj Parameter Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Repetive Peak Forward Current RMS Forward Current Average Forward Current Surge non Repetitive Forward Current Power Dissipation Storage and Junction Temperature Range Tc = 50°C δ = 0.5 tp = 10ms Sinusoidal Tc = 50°C tp ≤ 10µs Isolated DOP3I (Plastic) Value 1000 1000 375 70 30 200 60 - 40 to +150 Unit V V A A A A W °C THERMAL RESISTANCE Symbol Rth (j - c) Junction-case Parameter Value 1.6 Unit °C/W October 1999 - Ed: 2A 1/5 BYT 30PI-1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Tj = 25°C Tj = 100°C VF Tj = 25°C Tj = 100°C IF = 30A Test Conditions VR = VRRM Min. Typ. Max. 100 5 1.9 1.8 Unit µA mA V RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 1A IF = 0.5A diF/dt = - 15A/µs IR = 1A VR = 30V Irr = 0.25A Min. Typ. Max. 165 70 Unit ns TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance) Symbol tIRM diF/dt = - 120A/µ s diF/dt = - 240A/µ s IRM diF/dt = -120A/µs diF/dt = - 240A/µ s 22 Test Conditions VCC = 200 V IF = 30A Lp ≤ 0.05µH Tj = 100°C See figure 11 Min. Typ. Max. 200 120 19.5 A Unit ns TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance) Symbol C= VRP VCC Tj = 100°C diF/dt = - 30A/µs Test Conditions VCC = 200V Lp = 5µH IF = IF (AV) See figure 12 Min. Typ. Max. 4.5 Unit To evaluate the conduction losses use the following equations: VF = 1.47 + 0.010 IF P = 1.47 x IF(AV) + 0.010 IF2(RMS) Figure 1. Low frequency power losses versus average current Figure 2. Peak current versus form factor 2/5 BYT 30PI-1000 Figure 3. Non repetitive peak surge current versus overload duration Figure 4. Thermal impedance versus pulse width Figure 5. Voltage drop versus forward current Figure 6. Recovery charge versus diF/dt- Figure 7. Recovery time versus diF/dt- Figure 8. Peak reverse current versus diF/dt- 3/5 BYT 30PI-1000 Figure 9. Peak forward voltage versus diF/dtFigure 10. Dynamic parameters versus junction temperature. Figure 11. Turn-off switching characteristics (without series inductance). Figure 12. Turn-off switching characteristics (with series inductance) 4/5 BYT 30PI-1000 PACKAGE MECHANICAL DATA : Isolated DOP3I Plastic REF. A B C D E F G H K L N P R DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 1.45 1.55 0.057 0.061 14.35 15.60 0.565 0.614 0.5 0.7 0.020 0.028 2.7 2.9 0.106 0.114 15.8 16.5 0.622 0.650 20.4 21.1 0.815 0.831 15.1 15.5 0.594 0.610 3.4 3.65 0.134 0.144 4.08 4.17 0.161 0.164 10.8 11.3 0.425 0.444 1.20 1.40 0.047 0.055 4.60 typ. 0.181 typ. Cooling method: by conduction (method C) Marking: type number Weight: 18.84g Recommended torque value: 250cm. N Maximum torque value: 310cm. N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 .


BYT30P-400 BYT30PI BYT30PI-1000


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)