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BYQ30ED Dataheets PDF



Part Number BYQ30ED
Manufacturers NXP
Logo NXP
Description Rectifier diodes ultrafast/ rugged
Datasheet BYQ30ED DatasheetBYQ30ED Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. These devices can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency c.

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Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged GENERAL DESCRIPTION Glass passivated high efficiency rugged dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. These devices can withstand reverse voltage transients and have guaranteed reverse surge and ESD capability. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYQ30ED series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr IRRM PARAMETER BYQ30EDRepetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time Repetitive peak reverse current per diode MAX. 100 100 0.95 16 25 0.2 MAX. 150 150 0.95 16 25 0.2 MAX. 200 200 0.95 16 25 0.2 UNIT V V A ns A PINNING - SOT428 PIN 1 2 3 tab DESCRIPTION no connection cathode anode PIN CONFIGURATION tab SYMBOL k 1 a 2 2 cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave δ = 0.5; Tmb ≤ 104 ˚C CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 16 23 16 100 110 50 0.2 0.2 150 150 -200 200 200 200 UNIT V V V A A A A A A2s A A ˚C ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Tmb ≤ 104 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature 1 Neglecting switching and reverse current losses. October 1997 1 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 kΩ BYQ30ED series MIN. - MAX. 8 UNIT kV THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting minimum footprint, FR4 board MIN. TYP. 50 MAX. 3.0 2.5 UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage (per diode) Reverse current (per diode) CONDITIONS IF = 8 A; Tj = 150˚C IF = 16 A; Tj = 150˚C IF = 16 A; VR = VRWM; Tj = 100 ˚C VR = VRWM MIN. TYP. 0.83 1.0 0.98 0.3 2 MAX. 0.95 1.15 1.25 0.6 30 UNIT V V mA µA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL Qs trr Irrm Vfr PARAMETER Reverse recovery charge (per diode) Reverse recovery time (per diode) Peak reverse recovery current (per diode) Forward recovery voltage (per diode) CONDITIONS IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 50 A/µs; Tj = 100 ˚C IF = 1 A; dIF/dt = 10 A/µs MIN. TYP. 4 20 1.0 1 MAX. 11 25 2 UNIT nC ns A V October 1997 2 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30ED series I dI F dt F 12 10 Forward dissipation, PF (W) BYQ30 Vo = 0.75 V Rs 0.025 Ohms Tmb(max) / C 114 120 t a = 1.57 rr time 8 2.8 6 4 4 1.9 2.2 126 132 138 144 150 8 Q I R I s 10% 100% 2 0 rrm 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV))per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns 1000 I F 100 IF=10A time IF=1A VF V VF time fr 10 1 1 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25 ˚C. 12 10 8 6 4 2 Forward dissipation, PF (W) BYQ30 Vo = 0.75 V Rs = 0.025 Ohms 0.5 0.2 0.1 I tp Tmb(max) / C D = 1.0 trr / ns 114 120 126 132 1000 100 IF=10A IF=1A D= tp T t 138 144 150 12 10 T 0 0 2 4 6 8 Average forward current, IF(AV) (A) 10 1 1 10 dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. Fig.6. Maximum trr at Tj = 100 ˚C. October 1997 3 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30ED series 10 Irrm / A 100 Qs / nC IF=10A 1 IF=1A IF=10A 5A 2A 1A 10 0.1 0.01 1 10 -dIF/dt (A/us) 100 1.0 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum Irrm at Tj = 25 ˚C. Fig.10. Maximum Qs at Tj = 25 ˚C. 10 Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) IF=10A 1 IF=1A 1 0.1 0.1 P D tp t 0.01 1 10 -dIF/dt (A/us) 100 0.01 10 us 1 ms 0.1 s pulse width, tp (s) 10 s Fig.8. Maximum Irrm at Tj = 100 ˚C. Fig.11. Transient .


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