Document
2SK1945-01L,S
FAP-IIA Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof
> Outline Drawing
> Applications
- Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier
N-channel MOS-FET
900V 2,8Ω 5A 80W
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current
V DS V DGR ID
900 900
5
Pulsed Drain Current
I D(puls)
20
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
P D 80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit V V A A V W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=.