CXK77B3610GB

CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3610GB-6/7 is a high speed 1M bit 119 pin BGA (Plastic) Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz Inputs and outputs are LVTTL/LVCMOS compatible Single 3.3V power supply: 3.3V ± 0.15V Byte-write possible OE asynchronization JTAG test circuit Package 119TBGA 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latch mode (R-L mode) Function 32768 word × 36bit High Speed Bi-CMOS Synchronous SRAM Structure Silicon gate...