DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D113
BYG90-40 series Schottky barrier rectifier diodes
Produ...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D113
BYG90-40 series
Schottky barrier rectifier diodes
Product specification 1996 May 06
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
FEATURES Low switching losses Capability of absorbing very high surge current Fast recovery time Guard ring protected Plastic SMD package. APPLICATIONS Low power switched-mode power supplies Rectifying Polarity protection. DESCRIPTION The BYG 90-40 series consists of
Schottky barrier rectifier diodes, fabricated in planar technology, and encapsulated in rectangular SOD106A plastic SMD packages.
Top view cathode identifier handbook, 4 columns
BYG90-40 series
kk
aa
MAM129 - 1
Fig.1 Simplified outline (SOD106A), pin configuration and symbol.
1996 May 06
2
Philips Semiconductors
Product specification
Schottky barrier rectifier diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR continuous reverse voltage BYG90-20 BYG90-30 BYG90-40 VRRM repetitive peak reverse voltage BYG90-20 BYG90-30 BYG90-40 VRWM crest working reverse voltage BYG90-20 BYG90-30 BYG90-40 IF(AV) average forward current Tamb = 65 °C; see Fig.2; Rth j-a = 80 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 µs half sine wave; JEDEC method tp = 100 µs − − − − − − − − − − PARAMETER CONDITIONS
BYG90-40 series
MIN.
MAX.
UNIT
20 30 40 20 30 40 20 30 40 1
V V V V V V V V V A
IFSM IRSM Tstg Tj Notes
non-repetitive p...