BYG70J

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D168 BYG70 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability UL 94V-O classified plastic package Shipped in 12 mm embossed tape. Top view Side view handbook, 4 columns BYG70 series The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. cathode band k a MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYG70D BYG70G BYG70J VR continuous reverse voltage BYG70D BYG70G BYG70J IF(AV) average forward current averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig.4 L = 120 mH; Tj = Tj max prior to surge; ...