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BYD77A Dataheets PDF



Part Number BYD77A
Manufacturers NXP
Logo NXP
Description Ultra fast low-loss controlled avalanche rectifiers
Datasheet BYD77A DatasheetBYD77A Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1999 Nov 15 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Shipped in 8 mm embossed tape • Smallest surface .

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification Supersedes data of 1996 May 24 1999 Nov 15 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Shipped in 8 mm embossed tape • Smallest surface mount rectifier outline. MAM061 BYD77 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec™(1) technology. This package is handbook, 4 columns k a Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F BYD77G VR continuous reverse voltage BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F BYD77G IF(AV) average forward current BYD77A to D BYD77E to G IF(AV) average forward current BYD77A to D BYD77E to G Ttp = 105 °C; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 °C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 − − − − − − − − − − − 50 100 150 200 250 300 400 2.00 1.85 0.85 0.80 V V V V V V V A A A A PARAMETER repetitive peak reverse voltage − − − − − − − 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT 1999 Nov 15 2 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD77A to D BYD77E to G IFRM repetitive peak forward current BYD77A to D BYD77E to G IFSM ERSM Tstg Tj non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = 25 °C prior to surge; inductive load switched off Tamb = 60 °C; see Figs 8 and 9 − − − − −65 −65 CONDITIONS Ttp = 105 °C; see Figs 6 and 7 − − BYD77 series MIN. MAX. 15 13 8.5 8.0 25 10 +175 +175 A A A A A UNIT mJ °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD77A to D BYD77E to G VF forward voltage BYD77A to D BYD77E to G V(BR)R reverse avalanche breakdown voltage BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F BYD77G IR reverse current VR = VRRMmax; see Fig.14 VR = VRRMmax; Tj = 165 °C; see Fig.14 trr reverse recovery time BYD77A to D BYD77E to G when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 IR = 0.1 mA 55 110 165 220 275 330 440 − − − − − − − − − − − − − − − − − − 1 100 V V V V V V V µA µA IF = 1 A; see Figs 12 and 13 CONDITIONS IF = 1 A; Tj = Tj max; see Figs 12 and 13 MIN. − − − − TYP. − − − − MAX. 0.75 0.83 0.98 1.05 V V V V UNIT − − − − 25 50 ns ns 1999 Nov 15 3 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL Cd PARAMETER diode capacitance BYD77A to D BYD77E to G dI R -------dt maximum slope of reverse recovery current BYD77A to D BYD77E to G THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.17 CONDITIONS f = 1 MHz; VR = 0 V; see Fig.15 MIN. − − BYD77 series TYP. 50 40 MAX. − − UNIT pF pF − − − − 4 5 A/µs A/µs VALUE 30 150 UNIT K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16. For more information please refer to the “General Part of associated Handbook”. 1999 Nov 15 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers GRAPHICAL DATA MCD598 BYD77 series MCD596 handbook, halfpage 4 3 handbook, halfpage I F(AV) (A) 2 IF(AV) (A) 3 2 1 1 0 0 BYD77A to D a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. 100 Ttp ( C) o 0 200 0 BYD77E to G a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. 100 Ttp ( o C) 200 Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). MCD597 1.2 handbook, halfpage I F(AV) (A) 0.8 handbook, halfpage 1.0 MCD595 I F(AV) (A) 0.5 0.4 0 0 100 Tamb ( o C) 200 0 0 100 Tamb ( o C) 200 BYD77A to D a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Switched mode application. BYD77E to G a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Switched mode application. Fig.4 Maximum permiss.


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