Controlled avalanche rectifiers
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D423
BYD12 series Controlled avalanche rectifiers
Preliminary spe...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D423
BYD12 series Controlled avalanche rectifiers
Preliminary specification 1998 Dec 03
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack.
handbook, k halfpage
BYD12 series
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical glass SOD120 package through Implotec™(1) technology. This package is
a
MGL571
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD12D BYD12G BYD12J BYD12K BYD12M VR continuous reverse voltage BYD12D BYD12G BYD12J BYD12K BYD12M IF(AV) average forward current Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.6; averaged over any 20 ms period, see Fig.2 t = 10 ms half sinewave; Tj = 25 °C prior to surge; VR = VRRMmax see Fig.3 − − − − − − 200 400 600 800 1000 V V V V V PARAMETER repetitive peak reverse voltage − − − − − 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT
0.82 A
IFSM
non-repetitive peak forward current
−
15
A
Tstg Tj
storage temperature junction temperature
−65 −65
+175 +175
°C °C
1998 Dec 03
2
Philips Semiconductors
Preliminar...
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