BYD123

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D119 BYD123 Ultra fast low-loss rectifier Product specification Supersedes data of 1998 Dec 04 1999 Feb 10 Philips Semiconductors Product specification Ultra fast low-loss rectifier FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack. handbook, 4 columns BYD123 hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD81 package through Implotec™(1) technology. This package is k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 115 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 5 and 6 t = 10 ms half sinewave; VR = VRRMmax CONDITIONS − − − MIN. MAX. 200 200 1 V V A UNIT IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature − −65 −65 25 +175 +175 A °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR trr PARAMETER forward voltage reverse current reverse recovery time CONDITIONS IF = 1 A; see Fig.2; Tj = 150 °C IF = 1 A; see Fig.2 VR = VRRMmax; see Fig.3 VR = VRRMmax; Tj = 150 °C; see Fig.3 when switched from IF = 0.5 A to IR...