BYC10B-600

DISCRETE SEMICONDUCTORS DATA SHEET BYC10B-600 Rectifier diode ultrafast, low switching loss Product specification March 2001 1;3 Semiconductors Rectifier diode ultrafast, low switching loss Product specification BYC10B-600 FEATURES Extremely fast switching Low reverse recovery current Low thermal resistance Reduces switching losses in associated MOSFET SYMBOL k tab QUICK REFERENCE DATA VR = 600 V a VF ≤ 1.8 V 3 IF(AV) = 10 A trr = 19 ns (typ) APPLICATIONS Active power factor correction Half-bridge lighting ballasts Half-bridge/ full-bridge switched mode power supplies. The BYC10B-600 is supplied in the SOT404 surface mounting package. PINNING PIN DESCRIPTION 1 no connection 2 cathode1 3 anode tab cathode SOT404 tab 2 13 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VRRM VRWM VR IF(AV) IFRM IFSM Tstg Tj Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward current. Storage temperature Operating junction temperature Tmb ≤ 114 ˚C δ = 0.5; with reapplied VRRM(max); Tmb ≤ 78 ˚C δ = 0.5; with reapplied VRRM(max); Tmb ≤ 78 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) MIN. - - - -40 - MAX. 600 600 500 10 20 65 71 UNIT V V V A A A A 150 ˚C 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistan...