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BY8012 Dataheets PDF



Part Number BY8012
Manufacturers NXP
Logo NXP
Description Fast high-voltage soft-recovery controlled avalanche rectifiers
Datasheet BY8012 DatasheetBY8012 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8000 series Fast high-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of June 1994 1996 May 24 Philips Semiconductors Product specification Fast high-voltage soft-recovery controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Soft-recovery switchin.

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8000 series Fast high-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of June 1994 1996 May 24 Philips Semiconductors Product specification Fast high-voltage soft-recovery controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • Soft-recovery switching characteristics • Compact construction. k handbook, halfpage BY8000 series expansion of all used parts are matched. The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of a APPLICATIONS • For colour television and monitors up to 25 kHz • High-voltage applications for: – Multipliers – Layer-wound diode-splittransformers where controlled avalanche is required. MARKING Cathode band colour codes TYPE NUMBER BY8004 BY8006 BY8008 BY8010 BY8012 BY8014 BY8016 PACKAGE CODE SOD61AC SOD61AD SOD61AE SOD61AF SOD61AH SOD61AI SOD61AJ violet violet violet violet violet violet violet INNER BAND black green red violet orange lilac grey OUTER BAND Fig.1 Simplified outline (SOD61) and symbol. MAM163 1996 May 24 2 Philips Semiconductors Product specification Fast high-voltage soft-recovery controlled avalanche rectifiers LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BY8004 BY8006 BY8008 BY8010 BY8012 BY8014 BY8016 VRW working reverse voltage BY8004 BY8006 BY8008 BY8010 BY8012 BY8014 BY8016 IF(AV) average forward current BY8004 BY8006 BY8008 BY8010 BY8012 BY8014 BY8016 IFRM PRSM repetitive peak forward current note 1 non-repetitive peak reverse power dissipation t = 20 µs half sinewave; Tj = Tj max prior to surge BY8004 BY8006 BY8008 BY8010 BY8012 BY8014 BY8016 Tstg Tj Note 1. Withstands peak currents during flash-over in a picture tube. storage temperature junction temperature averaged over any 20 ms period; see Figs 2 to 8 − − − − − − − − − − − − − − − − − − − − − − PARAMETER repetitive peak reverse voltage − − − − − − − CONDITIONS BY8000 series MIN. MAX. 5 8 10 12 14 17 19 4 6 8 10 12 14 16 20 10 5 5 5 5 3 500 2.5 3.5 4.2 5.2 7.0 7.8 9.1 +120 +120 UNIT kV kV kV kV kV kV kV kV kV kV kV kV kV kV mA mA mA mA mA mA mA mA kW kW kW kW kW kW kW °C °C −65 −65 1996 May 24 3 Philips Semiconductors Product specification Fast high-voltage soft-recovery controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage BY8004 BY8006 BY8008 BY8010 BY8012 BY8014 BY8016 IR Qr reverse current recovery charge VR = VRWmax; Tj = 120 °C when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.16 when switched from IF = 100 mA to VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.16 when switched from IF = 2 mA to IR = 4 mA; measured at IR = 1 mA; see Fig.17 VR = 0 V; f = 1 MHz − − − − − − − CONDITIONS IF = 100 mA; Tj = Tj max; see Figs 9 to 15 MIN. − − − − − − − − − BY8000 series TYP. − − − − − − − − − MAX. 20 25 30 38 50 55 63 3 1 V V V V V V V UNIT µA nC tf fall time 80 − − ns trr reverse recovery time − − 100 ns Cd diode capacitance BY8004 BY8006 BY8008 BY8010 BY8012 BY8014 BY8016 0.90 0.65 0.55 0.45 0.35 0.30 0.25 − − − − − − − pF pF pF pF pF pF pF 1996 May 24 4 Philips Semiconductors Product specification Fast high-voltage soft-recovery controlled avalanche rectifiers GRAPHICAL DATA MBD301 BY8000 series handbook, halfpage 20 handbook, halfpage 10 MBD303 I F(AV) (mA) 16 a = 1.57 I F(AV) (mA) 8 a = 1.57 12 6 8 a = 6.32 4 a = 6.32 4 2 0 0 100 T amb ( oC) 200 0 0 100 T amb ( oC) 200 BY8004. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = 1.57: half sinewave. a = 6.32: line output transformer application; see Fig.18. BY8006. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = 1.57: half sinewave. a = 6.32: line output transformer application; see Fig.18. Fig.2 Maximum permissible average forward current as a function of ambient temperature. Fig.3 Maximum permissible average forward current as a function of ambient temperature. handbook, halfpage 5 MBD305 handbook, halfpage 5 MBD307 I F(AV) (mA) 4 a = 6.32 a = 1.57 I F(AV) (mA) 4 a = 6.32 a = 1.57 3 3 2 2 1 1 0 0 100 T amb ( oC) 200 0 0 100 T amb ( oC) 200 BY8008. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = 1.57: half sinewave. a = 6.32: line output transformer application; see Fig.18. BY8010. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = 1.57: half sinewave. a = 6.32: line output transformer application; see Fig.18. Fig.4 Maximum permissible average forward current as a function of ambient temperature. Fig.5 Maximum permissible average forward current as a function of ambi.


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