K3026

Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Unit Drain to Source breakdown voltage VDSS 60 V Gate to Source voltage VGSS ±20 V Drain current DC Pulse ID IDP ±40 A ±80 A Avalanche energy capacity EAS* 80 mJ Allowable power dissipation TC = 25°C Ta = 25°C PD 50 W 2 Channel temperature Storage temperature Tch 150 °C Tstg −55 to +150 °C * L = 0.1mH, IL = 40A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS Drain to Source breakdown voltage ...