ASTD5060

ASTD SERIES PLANAR TUNNEL (BACK) DIODE DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. FEATURES INCLUDE: www.DataSheet4U.com Excellent Temperature Stability Fast Rise / Fall Times Available in Die Form MAXIMUM RATINGS IR 10 mA PDISS PDISS TJ TSTG 3 ERG spike 50 mW @ TA = +60 OC -65 to +110 OC -65 to +125 OC PACKAGE STYLE 51 ELECTRICAL CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS IP ASTD 1020 ASTD 2030 ASTD 3040 ASTD 4050 ASTD 5060 MINIMUM TYPICAL MAXIMUM 100 200 200 300 300 400 400 500 500 600 UNITS µA VF IF = 3 mA ASTD 1020 ASTD 2030 ASTD 3040 ASTD 4050 ASTD 5060 135 mV 130 125 120 110 VR IR = 500 µA 400 mV A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/3 ASTD SERIES PLANAR TUNNEL (BACK) DIODE DYNAMIC ELECTRI...