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BZV90-47 Dataheets PDF



Part Number BZV90-47
Manufacturers NXP
Logo NXP
Description Voltage regulator diodes
Datasheet BZV90-47 DatasheetBZV90-47 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BZV90 series Voltage regulator diodes Product specification Supersedes data of 1996 Oct 25 1999 May 17 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 1500 mW • Tolerance series: approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. 1 handbook, halfpage BZV9.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BZV90 series Voltage regulator diodes Product specification Supersedes data of 1996 Oct 25 1999 May 17 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 1500 mW • Tolerance series: approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. 1 handbook, halfpage BZV90 series PINNING PIN 1 2, 4 3 anode cathode anode DESCRIPTION 4 3 DESCRIPTION Medium-power voltage regulator diodes in SOT223 plastic SMD packages. 1 2 3 MAM242 2, 4 The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV90-C2V4 to C75). Top view Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF 1999 May 17 PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.3 2 MIN. − MAX. 1.0 UNIT V PARAMETER continuous forward current non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.2 CONDITIONS − see Table “Per type” − − −65 − 1500 40 +150 150 mW W °C °C MIN. MAX. 400 UNIT mA 1999 May 17 3 Philips Semiconductors Per type Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST DIODE CAP. CURRENT Cd (pF) IZtest (mA) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 TYP. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 MIN. −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −3.5 −2.7 −2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 TYP. MAX. −1.6 −2.0 −2.1 −2.4 −2.4 −2.5 −2.5 −1.4 −0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAX. 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 MAX. 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 Voltage regulator diodes BZV90CXXX BZV90 series 2.5 2.0 1.5 1.5 1.5 Product specification 1999 May 17 4 Philips Semiconductors BZV90CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 DIODE CAP. TEST Cd (pF) CURRENT IZtest (mA) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (µA) VR (V) 15.4 16.8 18.9 21.0 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 1.25 1.25 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2 Voltage regulator diodes MIN. 22 24 27 30 33 36 39 43 47 51 56 62 68 75 20.8 22.8 25.0 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 TYP. 20 25 25 30 35 35 40 45 50 60 70 80 90 95 MAX. 55 70 80 80 80 90 130 150 170 180 200 215 240 255 MIN. 16.4 18.4 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 TYP. MAX. 18.4 20.4 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 20.0 22.0 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 5 5 2 2 2 2 2 2 2 2 2 2 2 2 MAX. 60 55 50 50 45 45 45 40 40 40 40 35 35 35 MAX. 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 BZV90 series Product specification Philips Semiconductors Product specification Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS lead length max.; note 1 BZV90 series VALUE 83.3 UNIT K/W 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. GRAPHICAL DATA MBG801 MBG781 103 handbook, halfpage PZS.


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