Am29DL800B

DATA SHEET Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ■ Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from the other bank — Zero latency between read and write operations — Read-while-erase — Read-while-program ■ Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications ■ Manufactured on 0.35 µm process technology — Compatible with 0.5 µm Am29DL800 device ■ High performance — Access times as fast as 70 ns ■ Low current consumption (typical values at 5 MHz) — 7 mA active read current — 21 mA active read-while-program or read-whileerase current — 17 mA active program-while-erase-suspended current — 200 nA in standby mode — 200 nA in automatic sleep mode — Standard tCE chip enable access time applies to transition f...