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BZV87-2V0 Dataheets PDF



Part Number BZV87-2V0
Manufacturers NXP
Logo NXP
Description Low-voltage stabistors
Datasheet BZV87-2V0 DatasheetBZV87-2V0 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BZV87 series Low-voltage stabistors Product specification Supersedes data of April 1992 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistors FEATURES • Low-voltage stabilization • Forward voltage range: 1.4 to 3.2 V • Total power dissipation: max. 330 mW • Differential resistance range: max. 20 to 35 Ω. APPLICATIONS • Power clipping • Level shifting • Low-voltage regulation • Temperature stabilization. Cathod.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BZV87 series Low-voltage stabistors Product specification Supersedes data of April 1992 1996 Mar 21 Philips Semiconductors Product specification Low-voltage stabistors FEATURES • Low-voltage stabilization • Forward voltage range: 1.4 to 3.2 V • Total power dissipation: max. 330 mW • Differential resistance range: max. 20 to 35 Ω. APPLICATIONS • Power clipping • Level shifting • Low-voltage regulation • Temperature stabilization. Cathode indicated by yellow marking band. The diodes are type branded. handbook, 4 columns BZV87 series DESCRIPTION Low-voltage stabilization diode in a small glass SOD80 SMD package. The series consists of four types: BZV87-1V4 to BZV87-3V2. k a MAM061 Fig.1 Simplified outline (SOD80) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF PARAMETER continuous reverse voltage continuous forward current BZV87-1V4 BZV87-2V0 BZV87-2V6 BZV87-3V2 Ptot Tstg Tj total power dissipation storage temperature junction temperature Tamb = 25 °C − − − − − −65 − 200 150 125 100 330 +150 150 mA mA mA mA mW °C °C CONDITIONS MIN. − MAX. 10 V UNIT 1996 Mar 21 2 Philips Semiconductors Product specification Low-voltage stabistors ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BZV87-1V4 BZV87-2V0 BZV87-2V6 BZV87-3V2 IR rdif reverse current differential resistance BZV87-1V4 BZV87-2V0 BZV87-2V6 BZV87-3V2 rdif differential resistance BZV87-1V4 BZV87-2V0 BZV87-2V6 BZV87-3V2 rdif differential resistance BZV87-1V4 BZV87-2V0 BZV87-2V6 BZV87-3V2 SF temperature coefficient BZV87-1V4 BZV87-2V0 BZV87-2V6 BZV87-3V2 Cd diode capacitance VR = 0 V; f = 1 MHz IF = 5 mA − − − − − IF = 10 mA; f = 1 kHz − − − − 6 8 9 10 IF = 5 mA; f = 1 kHz − − − − 10 15 18 20 VR = 5 V IF = 1 mA; f = 1 kHz − − − − 55 80 90 100 CONDITIONS IF = 5 mA; see Fig.2 1.30 1.85 2.35 2.85 − − − − − − MIN. TYP. BZV87 series MAX. 1.50 2.15 2.80 3.45 200 − − − − 20 30 32.5 35 10 15 17.5 20 − − − − 25 V V V V UNIT nA Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω mV/K mV/K mV/K mV/K pF −3.8 −6.0 −8.5 −11.5 15 THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 300 380 UNIT K/W K/W 1996 Mar 21 3 Philips Semiconductors Product specification Low-voltage stabistors GRAPHICAL DATA BZV87 series 2 10 handbook, halfpage MBG518 IF (mA) 1V4 10 2V0 2V6 3V2 1 10−1 1 2 3 VF (V) 4 Tj = 25 °C. Fig.2 Forward current as a function of forward voltage; typical values. 1996 Mar 21 4 Philips Semiconductors Product specification Low-voltage stabistors PACKAGE OUTLINE BZV87 series handbook, full pagewidth 1.7 O 1.5 0.3 3.7 3.3 Dimensions in mm. Cathode indicated by yellow marking band. 0.3 MBA388 - 2 Fig.3 SOD80. DEFINITIONS Data sheet status Objective specification .


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