4 Megabit CMOS 3.0 Volt-only Simultaneous Operation Flash Memory
Am29DL400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE...
Description
Am29DL400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
s Simultaneous Read/Write operations
— Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
— Zero latency between read and write operations — Read-while-erase — Read-while-program
s Single power supply operation
— 2.7 to 3.6 volt read and write operations for battery-powered applications
s Manufactured on 0.32 µm process technology s High performance
— Access times as fast as 70 ns
s Low current consumption (typical values at 5 MHz)
— 7 mA active read current — 21 mA active read-while-program or read-while-
erase current — 17 mA active program-while-erase-suspended
current — 200 nA in standby mode — 200 nA in automatic sleep mode — Standard tCE chip enable access time applies to
transition from automatic sleep mode to active mode
s Flexible sector architecture
— Two 16 K...
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